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  fr1qg t hru fr1zzg 1 amp fast recovery silicon rectifier 1200 to 2000 volts d o - 215aa (smbg) (round lead) dimensions inches mm dim min max min max note a .075 .116 1.90 2.95 b .078 .087 1.98 2.21 c .002 .008 .05 .20 d --- .02 --- .51 e .015 .03 .38 .76 f .065 .084 1.65 2.13 g .245 .276 6.22 7.00 h .160 .180 4.06 4.57 j .130 .151 3.30 3.83 featur e s for surface mount applications extremely low thermal resistance high temp soldering: 25 0 c for 10 seconds at terminals fast recovery times for high efficiency gull wing lead bend to prevent arcing perfect for ballast, television and monitor applications maximum ratings operating temperature: - 50 c to +15 0 c storage temperature: - 5 0 c to +15 0 c maximum thermal resistance; 15 c/w junction to lead mcc part number device marking maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage fr1qg fr1q 1200v 840v 1200v fr1vg fr1v 1400v 980v 1400v fr1yg fr1y 1600v 1120v 1600v fr1zg fr1z 1800v 1260v 1800v fr1zzg fr1zz 2000v 1400v 2000v lectrical characteristics @ 2 5 c unless otherwise specified average forward current i f(av) 1.0a t j = 5 5 c peak forward surge current i fsm 30a 8.3ms, half sine maximum instantaneous forward voltage fr1 qg - 1yg fr1 zg - 1zzg v f 1.50v 1.70v i fm = 1.0a; t j = 2 5 c* maximum dc reverse current at rated dc blocking voltage i r 5 m a 30 m a t j = 2 5 c t j = 125 c maximum reverse recovery time fr1 qg - 1yg fr1 zg - 1zzg t rr 300ns 500ns i f =0.5a, i r =1.0a, i r r =0.25a typical junction capacitance c j 45pf measured at 1.0mhz, v r =4.0v *pulse test: pulse width 200 m sec, duty cycle 2% 0.070? 0.190? 0.125? suggested solder pad layout g h j e f a b d c cathode band         
 omp onents 2 07 36 m a ri ll a street chatsworth               !  " #   $
%        !   " #    mcc www. mccsemi .com revision : 3 2003/03/19
average forward rectified current - amperes versus ambient temperature - c figure 2 forward derating curve 0 175 50 75 100 125 0 .2 .4 .6 single phase, half wave 60hz resistive or inductive load amps c 150 .8 1.0 1.2 junction capacitance - pf versus reverse voltage - volts instantaneous forward current - amperes versus instantaneous forward voltage - volts figure 1 typical forward characteristics 4 6 20 10 amps .5 .7 .9 1.1 1.3 1.5 .01 .02 .04 .06 .1 .2 .4 .6 1 2 25 c volts figure 3 junction capacitance .1 .2 1 .4 2 10 20 40 4 100 200 1 2 6 10 20 100 pf vol t s 60 40 4 400 1000 t j =25 c fr1 qg - 1yg fr1zg - 1zzg fr1qg thru fr1zzg mcc www. mccsemi .com revision : 3 2003/03/19
t rr +0.5a 0 - 0.25 - 1.0 1cm set time base for 20/100ns/cm 25vdc 1 w 50 w 1 0 w oscilloscope note 1 pulse generator note 2 notes: 1. rise time = 7ns max. input impedance = 1 megohm, 22pf 2. r ise time = 10ns max. source impedance = 50 ohms 3. resistors are non - inductive figure 5 reverse recovery time characteristic and test circuit diagram 1 100 4 0 10 20 30 8 figure 4 peak forward surge current peak forward surge current - amperes v ersus number of cycles at 60hz - cycles amps cycles 2 6 10 20 60 80 40 40 50 60 fr1qg thru fr1zzg mcc www. mccsemi .com revision : 3 2003/03/19


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